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1N5233A (DO-35)

1N5233A (DO-35)

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    DIODE ZENER 6V 500MW DO35

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5233A (DO-35) 数据手册
1N5221 thru 1N5281B, e3 DO-35 500 mW GLASS AXIAL-LEAD ZENER DIODES SCOTTSDALE DIVISION The popular 1N5221 thru 1N5281B series of 0.5 watt Zener Voltage Regulators provides a selection from 2.4 to 200 volts in standard 5% or 10% tolerances as well as tighter tolerances identified by different suffix letters on the part number. These glass axial-leaded DO-35 Zeners are also available in various military screening levels by adding a prefix identifier as described in the Features section. Microsemi also offers numerous other Zener products to meet higher and lower power applications. DO-35 (DO-204AH) IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • APPLICATIONS / BENEFITS • JEDEC registered 1N5221 to 1N5281B Internal bonds optionally available with “-1” suffix Options for screening in accordance with MIL-PRF19500 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers with “-1” suffix. Surface mount equivalents available as MLL5221 to MLL5281B in the DO-213AA MELF style package including “-1” suffix options (consult factory for others) RoHS Compliant devices available by adding “e3” suffix DO-7 glass body axial-leaded Zener equivalents are also available • • • • • • • MAXIMUM RATINGS • • • • • • Regulates voltage over a broad operating current and temperature range Extensive selection from 2.4 to 200 V Standard voltage tolerances are plus/minus 5% with B suffix, 10 % with A suffix identification Tight tolerances available in plus or minus 2% or 1% with C or D suffix respectively Flexible axial-lead mounting terminals Nonsensitive to ESD (MIL-STD-750 Method 1020) Minimal capacitance (see Figure 2) Inherently radiation hard per MicroNote 050 MECHANICAL AND PACKAGING • º Power dissipation at 25 C: 0.5 watts (also see derating in Figure 1). Operating and Storage temperature: -65ºC to +175ºC Thermal Resistance: 250 ºC/W junction to lead at 3/8 (10 mm) lead length from body, or 310ºC/W junction to ambient when mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm Steady-State Power: 0.5 watts at TL < 50oC 3/8 inch (10 mm) from body or 0.48 W at TA < 25ºC when mounted on FR4 PC board as described for thermal resistance above (also see Figure1) Forward voltage @200 mA: 1.5 volts (maximum) Solder Temperatures: 260 ºC for 10 s (max) CASE: Hermetically sealed axial-lead glass DO35 (DO-204AH) package • FINISH: Tin-Lead or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD-750, method 2026 • POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation • MARKING: Part number • TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) • WEIGHT: 0.2 grams See package dimensions on last page JEDEC Type No. Note 1 Test Current IZT mA 1N5221 1N5222 1N5223 1N5224 1N5225 1N5226 1N5227 1N5228 1N5229 1N5230 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 20 20 20 20 20 20 20 20 20 20 Copyright © 2005 8-09-2005 REV D Max Zener Impedance A & B Suffix Only Note 2 ZZT @ IZK Ohms ZZK @ IZK = 0.25 mA Ohms 30 30 30 30 29 28 24 23 22 19 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 Max Reverse Current A, B, C & D Suffix Only IR μA 100 100 75 75 50 25 15 10 5.0 50 @ VR Volts Non-Suffix A B,C & D IR @ VR Used For Suffix A μA 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 1.9 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 200 200 150 150 100 100 100 75 50 50 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Max Zener Voltage Temp. Coeff. (A & B Suffix Only) αVZ (% / oC) Note 3 -0.085 -0.085 -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 +/-0.055 +/-0.030 Page 1 1N5221−1N5281B,e3 DO-35 ELECTRICAL CHARACTERISTICS @ 25°C Nominal Zener Voltage VZ @ IZT Volts WWW . Microsemi .C OM APPEARANCE DESCRIPTION 1N5221 thru 1N5281B, e3 DO-35 500 mW GLASS AXIAL-LEAD ZENER DIODES SCOTTSDALE DIVISION 1N5231 1N5232 1N5233 1N5234 1N5235 1N5236 1N5237 1N5238 1N5239 1N5240 1N5241 1N5242 1N5243 1N5244 1N5245 1N5246 1N5247 1N5248 1N5249 1N5250 1N5251 1N5252 1N5253 1N5254 1N5255 1N5256 1N5257 1N5258 1N5259 1N5260 1N5261 1N5262 1N5263 1N5264 1N5265 1N5266 1N5267 1N5268 1N5269 1N5270 1N5271 1N5272 1N5273 1N5274 1N5275 1N5276 1N5277 1N5278 1N5279 1N5280 1N5281 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 100 110 120 130 140 150 160 170 180 190 200 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 1.3 1.1 1.0 0.95 0.90 0.85 0.80 0.74 0.68 0.66 0.65 Max Zener Impedance A & B Suffix Only Note 2 ZZT @ IZK Ohms ZZK @ IZK = 0.25 mA Ohms 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 185 230 270 330 370 400 500 750 900 1100 1300 1500 1700 1900 2200 2400 2500 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 2000 2200 2300 2600 3000 4000 4500 4500 5000 5500 5500 6000 6500 7000 Max Reverse Current A, B, C & D Suffix Only IR μA 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 @ VR Volts Non-Suffix A B,C & D IR @ VR Used For Suffix A μA 1.9 2.9 3.3 3.8 4.8 5.7 6.2 6.2 6.7 7.6 8.0 8.7 9.4 9.5 10.5 11.4 12.4 13.3 13.3 14.3 16.2 17.1 18.1 20 20 22 24 26 29 31 34 37 41 44 45 49 53 59 65 66 72 80 86 94 101 108 116 123 130 137 144 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 62 68 69 76 84 91 99 106 114 122 129 137 144 152 50 50 50 50 30 30 30 30 30 30 30 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Max Zener Voltage Temp. Coeff. (A & B Suffix Only) αVZ (% / oC) Note 3 +/-0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098 +0.098 +0.099 +0.099 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 *JEDEC registered data. JEDEC type numbers listed indicate a tolerance of +/-20% with guaranteed limits on only VZ, IR, and VF. Devices with guaranteed limits on all six parameters are indicated by suffix A for +/-10% tolerance and suffix B for +/-5% tolerance. Also available with suffix C or D which indicates 2% and 1% tolerance respectively. NOTES: 1. The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” (10 mm) minimum lead length from the case. 2. The zener impedance is derived from the 60 Hz ac voltage that results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to ensure a sharp knee on the breakdown curve, thereby eliminating unstable units. Also see MicroNote 202 for variation in dynamic impedance with different operating currents. 3. Temperature coefficient (αVZ). Test conditions for temperature coefficient are as follows: o o a. IZT = 7.5 mA, T1 = 25 C, T2 = 125 C (1N5221A, B thru 1N5242A, B). o o b. IZT = Rated IZT, T1 = 25 C, T2 = 125 C (1N5243A, B thru 1N5281A, B). (Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temp.) Copyright © 2005 8-09-2005 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5221−1N5281B,e3 DO-35 Test Current IZT mA WWW . Microsemi .C OM JEDEC Type No. Note 1 Nominal Zener Voltage VZ @ IZT Volts 1N5221 thru 1N5281B, e3 DO-35 500 mW GLASS AXIAL-LEAD ZENER DIODES SCOTTSDALE DIVISION Pd, Rated Power Dissipation (mW) WWW . Microsemi .C OM GRAPHS TL Lead Temperature at 3/8” From Body or TA on FR4 PC Board FIGURE 1 POWER DERATING CURVE FIGURE 2 CAPACITANCE vs. ZENER VOLTAGE (TYPICAL) PACKAGE DIMENSIONS 1N5221−1N5281B,e3 DO-35 All dimensions in INCH mm Copyright © 2005 8-09-2005 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
1N5233A (DO-35)
物料型号:1N5221至1N5281B

器件简介:这一系列齐纳二极管提供从2.4伏到200伏的电压调节选项,具有标准5%或10%的容差,以及通过不同的后缀字母标识的更紧密的容差选项。

引脚分配:DO-35(DO-204AH)封装,具有轴向引线,阳极通过带色环的一端指示。

参数特性: - 功率耗散:0.5瓦特 - 工作和存储温度:-65°C至+175°C - 热阻:从结到引线250°C/W(3/8英寸引线长度)或从结到环境310°C/W(在FR4 PCB板上) - 表面安装等效型号:MLL5221至MLL5281B

功能详解: - 这些二极管在宽广的工作电流和温度范围内调节电压。 - 可选内部键合,带有“-1”后缀。 - 根据MIL-PRF19500提供JAN、JANTX、JANTXV和JANS的筛选选项。

应用信息: - 适用于需要电压调节的广泛应用,包括电源供应和信号处理。

封装信息: - 采用DO-35(DO-204AH)封装,具有轴向引线。 - 提供带“e3”后缀的RoHS合规设备。 - 具有最小的电容特性。

电气特性:文档提供了详细的电气特性表,包括标称齐纳电压、测试电流、最大反向电流、最大齐纳阻抗、最大齐纳电压温度系数等。

机械和封装:包括功率耗散、外壳类型、操作和存储温度、热阻、镀层、极性、稳态功率、标记、胶带和卷轴选项、重量等信息。

图表:包括功率耗散曲线图和齐纳电压与电容的关系图。

版权和联系信息:Microsemi Scottsdale Division,2005年版权所有。
1N5233A (DO-35) 价格&库存

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